Miniband structures and effective masses of GaAs/AlAs superlattices with ultra-thin AlAs layers

Solid State Communications

Volumn 102, Issue 11, 1997, Pages 803-807

  Nakayama, M ^a   Nakanishi, T ^a   Okajima, K ^a   Ando, M ^a   Nishimura, H ^a  

^a Osaka Prefecture University   (Japan)

Author keywords

A. quantum wells; A. semiconductors; D. electronic band structure; D. optical properties; E. light absorption and reflection

Indexed keywords

BAND STRUCTURE; CALCULATIONS; ELECTRONIC STRUCTURE; LIGHT ABSORPTION; LIGHT REFLECTION; MONOLAYERS; OPTICAL PROPERTIES; OPTICAL VARIABLES MEASUREMENT; OSCILLATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

ELECTRONIC BAND STRUCTURE; KRONIG-PENNEY MODEL; PHOTOCURRENT SPECTROSCOPY; PHOTOGENERATED CARRIERS;

SEMICONDUCTOR SUPERLATTICES;

EID: 0031167368     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(97)00084-7     Document Type: Article

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