Sequential tunneling current through semiconductor superlattices under intense THz radiation

Applied Physics Letters

Volumn 70, Issue 26, 1997, Pages 3546-3548

  Platero, Gloria ^a   Aguado, Ramón ^a  

^a INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CURRENT DENSITY; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRON ABSORPTION; ELECTRON EMISSION; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; ELECTRONIC DENSITY OF STATES; RADIATION EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE;

CHARGE OCCUPATION; DYNAMICAL LOCALIZATION; ELECTRON PUMPING; SEQUENTIAL TUNNELING CURRENT; TUNNELING CHANNELS;

SEMICONDUCTOR SUPERLATTICES;

EID: 0031166873     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119228     Document Type: Article

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