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Volumn 391, Issue 2, 1997, Pages 315-328

Fabrication of an integrated ΔE-E-silicon detector by wafer bonding using cobalt disilicide

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; COBALT COMPOUNDS; COMPUTER SIMULATION; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON SENSORS; SILICON WAFERS;

EID: 0031166654     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(97)00408-7     Document Type: Article
Times cited : (16)

References (13)
  • 6
    • 0041074986 scopus 로고    scopus 로고
    • Ph.D. Thesis, Dopant diffusion in cobalt and nickel silicide-silicon system for ULSI-technology, TRITA-FTE Forskningsrapport 1993:2 Royal Institute of Technology, Department of Electronics, Solid State Electronics
    • Canna Zaring, Ph.D. Thesis, Dopant diffusion in cobalt and nickel silicide-silicon system for ULSI-technology, TRITA-FTE Forskningsrapport 1993:2 Royal Institute of Technology, Department of Electronics, Solid State Electronics.
    • Zaring, C.1
  • 8
    • 1642577973 scopus 로고    scopus 로고
    • Point defects in solids
    • J.H. Crawford Jr., L.M. Slifkin (Eds.), Plenum Press, New York
    • J.W. Carbett, J.C. Bowgoin, Point defects in solids, in: J.H. Crawford Jr., L.M. Slifkin (Eds.), Semiconductor and Molecular Crystals, vol. 2, Plenum Press, New York, p.1.
    • Semiconductor and Molecular Crystals , vol.2 , pp. 1
    • Carbett, J.W.1    Bowgoin, J.C.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.