Femtosecond time-resolved photoelectron spectroscopy of annealed and sputtered GaP(1 1 0)

Journal of Luminescence

Volumn 72-74, Issue , 1997, Pages 108-109

  Leblans, M ^a,b   Thoma, R K R ^a   LoPresti, J L ^a   Reichling, M ^c   Williams, R T ^a  

^a WAKE FOREST UNIVERSITY   (United States)

^b UNIVERSITY OF ANTWERP   (Belgium)

^c FREIE UNIVERSITÄT BERLIN   (Germany)

Author keywords

Photoelectron emission; Semiconductors; Surfaces; Ultrafast spectroscopy

Indexed keywords

ANNEALING; BAND STRUCTURE; ELECTRON EMISSION; ENERGY GAP; PHOTONS; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM COMPOUNDS; SPUTTERING; SURFACE PHENOMENA;

BAND GAP; GALLIUM PHOSPHIDE; PHOTOELECTRON EMISSION; PHOTON EXCITATION; ULTRAFAST SPECTROSCOPY;

PHOTOELECTRON SPECTROSCOPY;

EID: 0031166576     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(96)00294-3     Document Type: Article

References (2)

1. A. Okano, R.K.R. Thoma, G.P. Williams Jr. and R.T. Williams, Phys. Rev. B 52 (1995) 14789.
2. M.W. Rowe, H. Liu, G.P. Williams Jr. and R.T. Williams, Phys. Rev. B 47 (1993) 2048.