Fabrication of superconductor/semiconductor quasi-monolithic devices using epitaxial liftoff technology

IEEE Transactions on Applied Superconductivity

Volumn 7, Issue 2 PART 3, 1997, Pages 3461-3464

  Huang, Qixin ^a   Hohkawa, Kohji ^a  

^a KANAGAWA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; HIGH TEMPERATURE SUPERCONDUCTORS; INTEGRATED CIRCUIT MANUFACTURE; MESFET DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

EPITAXIAL LIFTOFF; QUASIMONOLITHIC DEVICES;

MONOLITHIC INTEGRATED CIRCUITS;

EID: 0031165621     PISSN: 10518223     EISSN: None     Source Type: Journal    
DOI: 10.1109/77.622135     Document Type: Article

References (3)

1. G. Liang X. Dai D. F. Hébert T. Van Duzer N. Newman and Brady F. Cole High-temperature superconductor resonators and phase shifters IEEE Trans on Applied Superconductivity vol. 1 pp.58-651991.
2. D. B. Laubacher Z .Y. Shen P. S. Pang C. Wüker and W. L. Holstein Hybrid HTS and III-V microwave oscillators Advances in Superconductivity IV Eds. Hayakawa Koshizuka Eds. Springer-Verlag l ' 991 pp. 953-956.
3. Q. Huang H. Hohkawa and S. Noge Fabrication process of superconductor/semiconductor quasi-monolithic devices employing epitaxial liftoff Fifth ISEC Extended Abstracts pp. 281-2831995