The vertical photoconductor: A novel device structure suitable for HgCdTe two-dimensional infrared focal plane arrays

Infrared Physics and Technology

Volumn 38, Issue 4, 1997, Pages 205-221

  Siliquini, J F ^a   Faraone, L ^a  

^a UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

INFRARED FOCAL PLANE ARRAYS; MERCURY CADMIUM TELLURIDE; POWER DISSIPATIVE LEVEL;

ENERGY DISSIPATION; EPITAXIAL GROWTH; HETEROJUNCTIONS; INFRARED DEVICES; INFRARED RADIATION; PERFORMANCE; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

PHOTOCONDUCTING MATERIALS;

EID: 0031164428     PISSN: 13504495     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1350-4495(97)00016-9     Document Type: Article

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