Hydrogenated silicon-oxynitride film antireflective layer for optical lithography

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 6 A, 1997, Pages 3775-3785

  Ogawa, Tohru ^a,b   Gocho, Tetsuo ^a   Nakano, Hiroyuki ^a   Tsukamoto, Masanori ^a  

^a Sony Corporation Semiconductor Network Company   (Japan)

^b ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

Author keywords

Antireflective process; Hydrogenated silicon oxynitride; KrF excimer laser lithography; Line width controls; Optical constant; Thin film interference effects

Indexed keywords

ANTIREFLECTIVE PROCESS; HYDROGENATED SILICON OXYNITRIDE; KRYPTON FLUORIDE EXCIMER LASER LITHOGRAPHY; LINE WIDTH CONTROL; OPTICAL CONSTANT; THIN FILM INTERFERENCE EFFECTS;

CHEMICAL VAPOR DEPOSITION; NITRIDES; OPTIMIZATION; PERFORMANCE; PHOTOLITHOGRAPHY; PHOTORESISTS; REFRACTIVE INDEX; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES;

ANTIREFLECTION COATINGS;

EID: 0031164244     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.3775     Document Type: Article

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