메뉴 건너뛰기




Volumn 57, Issue 3, 1997, Pages 609-630

Qualitative properties of steady-state Poisson-Nernst-Planck systems: Mathematical study

Author keywords

Basic symmetries; Categories; Fundamental inequalities; Simple boundary conditions; Uniqueness

Indexed keywords

BOUNDARY CONDITIONS; PARTIAL DIFFERENTIAL EQUATIONS;

EID: 0031164174     PISSN: 00361399     EISSN: None     Source Type: Journal    
DOI: 10.1137/S0036139995279809     Document Type: Article
Times cited : (113)

References (19)
  • 1
    • 38249011375 scopus 로고
    • A method for proving uniqueness theorems for the stationary semiconductor device and electrochemistry equations
    • F. ALABAU, A method for proving uniqueness theorems for the stationary semiconductor device and electrochemistry equations, Nonlinear Anal., 18 (1992), pp. 861-872.
    • (1992) Nonlinear Anal. , vol.18 , pp. 861-872
    • Alabau, F.1
  • 2
    • 0026929304 scopus 로고
    • Ion flow through narrow membrane channels: Part II
    • V. BARCILON, D.-P. CHEN, AND R. EISENBERG, Ion flow through narrow membrane channels: part II, SIAM J. Appl. Math., 52 (1992), pp. 1405-1425.
    • (1992) SIAM J. Appl. Math. , vol.52 , pp. 1405-1425
    • Barcilon, V.1    Chen, D.-P.2    Eisenberg, R.3
  • 3
    • 0031166471 scopus 로고    scopus 로고
    • Qualitative properties of steady-state Poisson-Nernst-Planck systems: Perturbation and simulation study
    • [3J V. BARCILON, D.-P. CHEN, R. EISENBERG, AND J. JEROME, Qualitative properties of steady-state Poisson-Nernst-Planck systems: Perturbation and simulation study, SIAM J. Appl. Math., 57 (1997), pp. 631-648.
    • (1997) SIAM J. Appl. Math. , vol.57 , pp. 631-648
    • Barcilon, J.V.1    Chen, D.-P.2    Eisenberg, R.3    Jerome, J.4
  • 4
    • 0000844712 scopus 로고
    • A singular perturbation analysis of reverse biased semiconductor diodes
    • F. BREZZI, A. CAPELLO, AND L. GASTALDI, A singular perturbation analysis of reverse biased semiconductor diodes, SIAM J. Math. Anal., 20 (1989), pp. 372-387.
    • (1989) SIAM J. Math. Anal. , vol.20 , pp. 372-387
    • Brezzi, F.1    Capello, A.2    Gastaldi, L.3
  • 5
    • 0027157588 scopus 로고
    • Charges, currents, and potentials in ionic channels of one conformation
    • D.-P. CHEN AND R. S. EISENBERG, Charges, currents, and potentials in ionic channels of one conformation, Biophys. J., 64 (1993), pp. 1405-1421.
    • (1993) Biophys. J. , vol.64 , pp. 1405-1421
    • Chen, D.-P.1    Eisenberg, R.S.2
  • 6
    • 0038874935 scopus 로고
    • Holt, Rinehart, and Winston, New York
    • A. FRIEDMAN, Advanced Calculus, Holt, Rinehart, and Winston, New York, 1971.
    • (1971) Advanced Calculus
    • Friedman, A.1
  • 7
    • 77955513935 scopus 로고
    • On uniqueness and stability of steady-state carrier distributions in semiconductors
    • J. Vosmansky and M. Zlamal, eds., Springer-Verlag, New York
    • H. GAJEWSKI, On uniqueness and stability of steady-state carrier distributions in semiconductors, in Equadiff 6, Lecture Notes in Mathematics 1192, J. Vosmansky and M. Zlamal, eds., Springer-Verlag, New York, 1986, pp. 209-214.
    • (1986) Equadiff 6, Lecture Notes in Mathematics 1192 , pp. 209-214
    • Gajewski, H.1
  • 10
    • 0022107831 scopus 로고
    • Consistency of semiconductor modeling: An existence/stability analysis for the stationary van Roosbroeck system
    • J. W. JEROME, Consistency of semiconductor modeling: An existence/stability analysis for the stationary van Roosbroeck system, SIAM J. Appl. Math., 45 (1985), pp. 565-590.
    • (1985) SIAM J. Appl. Math. , vol.45 , pp. 565-590
    • Jerome, J.W.1
  • 11
    • 5944261704 scopus 로고
    • The role of semiconductor device diameter and energy-band bending in convergence of Picard iteration for Gummel's map
    • J. W. JEROME, The role of semiconductor device diameter and energy-band bending in convergence of Picard iteration for Gummel's map, IEEE Trans. Elec. Dev., ED-32 (1985), pp. 2045-2051.
    • (1985) IEEE Trans. Elec. Dev. , vol.ED-32 , pp. 2045-2051
    • Jerome, J.W.1
  • 13
    • 0026139032 scopus 로고
    • A finite element approximation theory for the drift-diffusion semiconductor model
    • J. W. JEROME AND T. KERKHOVEN, A finite element approximation theory for the drift-diffusion semiconductor model, SIAM J. Numer. Anal., 28 (1991), pp. 403-422.
    • (1991) SIAM J. Numer. Anal. , vol.28 , pp. 403-422
    • Jerome, J.W.1    Kerkhoven, T.2
  • 19
    • 0026111191 scopus 로고
    • Multiple steady-state solutions in a multifunction semiconductor device
    • M. WARD, L. REYNA, AND F. ODEH, Multiple steady-state solutions in a multifunction semiconductor device, SIAM J. Appl. Math., 51 (1991), pp. 90-123.
    • (1991) SIAM J. Appl. Math. , vol.51 , pp. 90-123
    • Ward, M.1    Reyna, L.2    Odeh, F.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.