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Thin Solid Films

Volumn 302, Issue 1-2, 1997, Pages 270-274

Observation of the Burstein-Moss shift in heavily Te-doped In0.5Ga0.5P layers grown by liquid phase epitaxy

(3) Yoon, I T a Ji, T S a Park, H L a

a Yonsei University (South Korea)

Author keywords

Hall effect; Liquid phase epitaxy; Luminescence; Semiconductors

Indexed keywords

CARRIER CONCENTRATION; ELECTRON TRANSITIONS; FERMI LEVEL; FILM GROWTH; HALL EFFECT; LIQUID PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

BURSTEIN-MOSS SHIFT;

SEMICONDUCTING FILMS;

EID: 0031163352 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(97)00009-6 Document Type: Article

Times cited : (6)

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