Effect of heat treatment on fluorescence properties of Sm2+-doped SiO2 films prepared by RF magnetron sputtering method

Journal of the Ceramic Society of Japan

Volumn 105, Issue 6, 1997, Pages 519-521

  Ishihara, Tsuguo ^a   Tanaka, Katsuhisa ^b   Hirao, Kazuyuki ^b   Soga, Naohiro ^b  

^a Hyogo Prefectural Institute of Industrial Research Technical Center for Machinery and Metals   (Japan)

^b KYOTO UNIVERSITY   (Japan)

Author keywords

Doping; Fluorescence spectrum; Heat treatment; RF sputtering; SiO2 film; Sm2+ ion

Indexed keywords

AMORPHOUS FILMS; ARGON; DOPING (ADDITIVES); FLUORESCENCE; GLASS; HEAT TREATMENT; IONS; MAGNETRON SPUTTERING; SAMARIUM; THERMAL EFFECTS;

SILICA GLASS FILM;

SILICA;

EID: 0031163118     PISSN: 09145400     EISSN: None     Source Type: Journal    
DOI: 10.2109/jcersj.105.519     Document Type: Article

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