Probing of InAs/AlSb double barrier heterostructures by ballistic electron emission spectroscopy

Applied Physics Letters

Volumn 70, Issue 26, 1997, Pages 3588-3590

  Walachova J ^a   Zelinka, J ^a   Vanis J ^a   Chow, D H ^b   Schulman, J N ^b   Karamazov, S ^c   Cukr, M ^d   Zich, P ^d   Kral J ^e   McGill, T C ^f  

^a INSTITUTE OF PHOTONICS AND ELECTRONICS   (Czech Republic)

^b Hughes Aircraft Co   (United States)

^c UNIVERSITY OF PARDUBICE   (Czech Republic)

^d INSTITUTE OF PHYSICS   (Czech Republic)

^e CZECH TECHNICAL UNIVERSITY IN PRAGUE   (Czech Republic)

^f CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRON EMISSION; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; EMISSION SPECTROSCOPY; PROBES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

ALUMINUM ANTIMONY COMPOUNDS; BALLISTIC ELECTRON EMISSION SPECTROSCOPY; INDIUM ARSENIDE; RESONANT TUNNELING HETEROSTRUCTURE;

HETEROJUNCTIONS;

EID: 0031163062     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119274     Document Type: Article

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