Effect of film thickness on preferred growth of TiN films during filtered arc deposition

Journal of Materials Science Letters

Volumn 16, Issue 12, 1997, Pages 974-976

  Zhao, J P ^a   Wang, X ^a   Chen, Z Y ^a   Yang, S Q ^a   Shi, T S ^a   Liu, X ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; CRYSTAL ORIENTATION; DEPOSITION; FILM GROWTH; FILM PREPARATION; INTERFACIAL ENERGY; METALLIC FILMS; PLASMA APPLICATIONS; SILICON WAFERS; SUBSTRATES; THICKNESS CONTROL; X RAY CRYSTALLOGRAPHY;

FILTERED ARC DEPOSITION (FAD); STRAIN ENERGY;

TITANIUM NITRIDE;

EID: 0031162833     PISSN: 02618028     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1018529314358     Document Type: Article

References (11)

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