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Surface Science

Volumn 381, Issue 1, 1997, Pages

Surfactant-mediated growth of CoSi2 on Si (100)

(3) Scheuch, V a Voigtlander B a Bonzel, H P a

a FORSCHUNGSZENTRUM JÜLICH (Germany)

Author keywords

Arsenic; Cobalt; Epitaxy; Growth; Low index single crystal surfaces; Scanning tunneling microscopy; Silicides; Silicon

Indexed keywords

ARSENIC; COBALT COMPOUNDS; CRYSTAL ATOMIC STRUCTURE; DEPOSITION; EPITAXIAL GROWTH; FILM GROWTH; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SINGLE CRYSTALS; SURFACE ACTIVE AGENTS; SURFACE ROUGHNESS; THIN FILMS;

ALLOTAXY METHODS; SILICIDES;

SEMICONDUCTING FILMS;

EID: 0031162758 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(97)00049-6 Document Type: Article

Times cited : (11)

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