Performance of GaAs microbridge thermocouple infrared detectors

Journal of Microelectromechanical Systems

Volumn 6, Issue 2, 1997, Pages 136-141

  Chong, Nui ^a,b,c   Srinivas, Tadigadapa A S ^a,c,d,e,f,g   Ahmed, Haroon ^{a,c,h,i,j,k,l}  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF HONG KONG   (Hong Kong)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^d INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

^e Institute of Technical Physics   (Germany)

^f UNIVERSITY COLLEGE CORK   (Ireland)

^g R D in the Intgd Sensing Syst Ltd   (United States)

^h IMPERIAL COLLEGE LONDON   (United Kingdom)

ⁱ Department of Microelectronics ^*

^j IBM T J WATSON RESEARCH CENTER   (United States)

^k Hitachi Europe Ltd   (Japan)

^l ROYAL ACADEMY OF ENGINEERING   (United Kingdom)

more..

Author keywords

Gallium arsenide; Heat transport; Infrared detectors; Thermocouple

Indexed keywords

COMPUTER SIMULATION; ELECTRIC MEASURING BRIDGES; HEAT TRANSFER; MATHEMATICAL MODELS; PERFORMANCE; SEMICONDUCTING GALLIUM ARSENIDE; SENSITIVITY ANALYSIS; THERMOCOUPLES;

MICROBRIDGES;

INFRARED DETECTORS;

EID: 0031162060     PISSN: 10577157     EISSN: None     Source Type: Journal    
DOI: 10.1109/84.585791     Document Type: Article

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