The role of a thin amorphous silicon layer in the fabrication of micro-pored silicon

Thin Solid Films

Volumn 301, Issue 1-2, 1997, Pages 188-191

  Kim, Eun Kyu ^a   Lee, Min Suk ^a   Choi, Won Chel ^a,c   Lee, Ho Nyung ^a   Min, Suk Ki ^a   Lyou, Jonghun ^b  

^a Korea Institute of Science and Technology   (South Korea)

^b Korea University   (South Korea)

^c Sungkyunkwan University   (South Korea)

Author keywords

Nanostructures; Optical properties; Scanning electron microscopy; Silicon

Indexed keywords

AMORPHOUS SILICON; ANODIC OXIDATION; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; POROSITY; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; SPUTTERING;

MICROPOROUS SILICON;

THIN FILMS;

EID: 0031153726     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0040-6090(96)09588-0     Document Type: Article

References (17)

1. See, for example, Thin Solid Films 276 (1)/(2) (1996).
2. L.T. Canham, Appl. Phys. Lett. 57 (1990) 1046.
3. R. Laiho, A. Pavlov, Phys. Rev. B 14 (1995) 15774.
4. A. Bsiesy, F. Muller, M. Ligeon, F. Gaspard, R. Herino, R. Romestain, J.C. Vial, Appl. Phys. Lett. 65 (1994) 3371.
5. S.D. Campbell, L.A. Jones, E. Nakamichi, F.-X. Wei, L.D. Zajchowski, D.F. Thomas, J. Vac. Sci. Technol. B 13 (1995) 1184.
6. T. Wadayama, S. Yamamoto, A. Hatta, Appl. Phys. Lett. 65 (1994) 1653.
7. P. Guyader, P. Joubert, M. Guendouz, C. Beau, M. Sarret, Appl. Phys. Lett. 65 (1994) 1787.
8. R.W. Fathauer, T. George, A. Ksendzov, R.P. Vasquez, Appl. Phys. Lett. 60 (1992) 995.
9. J. Xu, A.J. Steckl, J. Vac. Sci. Technol. B 13 (1995) 1221.
10. H. Koyama, T. Nakagawa, T. Ozaki, N. Koshida, Appl. Phys. Lett. 65 (1994) 1656.
11. X. Zhao, O. Schoenfeld, S. Komuro, Y. Aoyagi, T. Sugano, Phys. Rev. B 50 (1994) 18654.
12. S. Kalem, M. Rosenbauer, Appl. Phys. Lett. 67 (1995) 2551.
13. T. Ichinoche, S. Nozaki, H. Ono, H. Morisaki, Appl. Phys. Lett. 66 (1995) 1644.
14. H. Tamura, M. Ruchschloss, T. Wirschem, S. Veprek, Appl. Phys. Lett. 65 (1994) 1537.
15. T. Takagahara, K. Takeda, Phys. Rev. B 46 (1992) 15578.
16. T. Ban, T. Koizumi, S. Haba, N. Koshida, Y. Suda, Japan J. Appl. Phys. 33 (1994) 5603.
17. X. Zhao, O. Schoenfeld, J. Kusano, Y. Aoyagi, T. Sugano, Japan J. Appl. Phys. 33 (1994) L649.