Study of polycrystalline and amorphous LPCVD silicon films by atomic force microscopy

Surface and Interface Analysis

Volumn 25, Issue 7-8, 1997, Pages 529-532

  Pleschinger, A ^a   Lutz, J ^a   Kuchar, F ^a   Noll, H ^b   Pippan, M ^b  

^a UNIVERSITY OF LEOBEN   (Austria)

^b AMS AG   (Austria)

Author keywords

Amorphous silicon; Atomic force microscopy; Chemical vapour deposited silicon; Polycrystalline silicon; Recrystallization, phosphorus doping

Indexed keywords

AMORPHOUS FILMS; ANNEALING; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; HIGH TEMPERATURE EFFECTS; PHOSPHORUS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD); SCANNING PROBE MICROSCOPY;

SEMICONDUCTING FILMS;

EID: 0031153621     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/(sici)1096-9918(199706)25:7/8<529::aid-sia263>3.0.co;2-s     Document Type: Article

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