SCOPUS 정보 검색 플랫폼

Volumn 49, Issue 1, 1997, Pages 29-32

Growth and electron effective mass measurements of strained Si and Si0.94Ge0.06 on relaxed Si0.62Ge0.38 buffers grown by rapid thermal chemical vapor deposition

(2) Liu, C W a Venkataraman, V b

a NATIONAL TAIWAN UNIVERSITY (Taiwan)

b INDIAN INSTITUTE OF SCIENCE (India)

Author keywords

Cyclotron resonance; Electron effective mass; Graded relaxed buffer; SiGe

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DISLOCATIONS (CRYSTALS); ELECTRON CYCLOTRON RESONANCE; ELECTRON MICROSCOPY; MULTILAYERS; SEMICONDUCTING GERMANIUM COMPOUNDS;

ELECTRON EFFECTIVE MASS; GRADED RELAXED BUFFER; RAPID THERMAL CHEMICAL VAPOR DEPOSITION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031153228 PISSN: 02540584 EISSN: None Source Type: Journal
DOI: 10.1016/S0254-0584(97)80123-X Document Type: Article

Times cited : (4)

References (13)

1
- 0027889053
- E. Crabbe, B.S. Meyerson, J.M.C. Stork and D.L. Harame, Tech. Dig. Int. Electron. Dev. Meet., IEEE, Piscataway, N.J., U.S.A., 1993, p. 83.
- (1993) Tech. Dig. Int. Electron. Dev. Meet., IEEE, Piscataway, N.J., U.S.A. , pp. 83
- Crabbe, E.¹ Meyerson, B.S.² Stork, J.M.C.³ Harame, D.L.⁴

2
- 4243518475
- A. Schuppen, U. Erben, A. Gruhle, H. Kibble, H. Sohumacher and U. Konig, Tech. Dig. Int. Electron. Dev. Meet., IEEE, Piscataway, N.J., U.S.A., 1995, p. 743.
- (1995) Tech. Dig. Int. Electron. Dev. Meet., IEEE, Piscataway, N.J., U.S.A. , pp. 743
- Schuppen, A.¹ Erben, U.² Gruhle, A.³ Kibble, H.⁴ Sohumacher, H.⁵ Konig, U.⁶

3
- 36449008424
- K. Ismail, M. Arafa, K.L. Saenger, J.O. Chu and B.S. Meyerson, Appl. Phys. Lett., 66 (1995) 1077.
- (1995) Appl. Phys. Lett. , vol.66 , pp. 1077
- Ismail, K.¹ Arafa, M.² Saenger, K.L.³ Chu, J.O.⁴ Meyerson, B.S.⁵

4
- 0001279324
- Y.H. Xie, Don Moroe, E.A. Fitzgerald, P.J. Silverman, P.A. Thiel and G.P. Watson, Appl. Phys. Lett., 63 (1993) 2263.
- (1993) Appl. Phys. Lett. , vol.63 , pp. 2263
- Xie, Y.H.¹ Don Moroe² Fitzgerald, E.A.³ Silverman, P.J.⁴ Thiel, P.A.⁵ Watson, G.P.⁶

5
- 0004433732
- T.E. Whall, A.D. Plews, N.L. Mattey and E.H.C. Parker, Appl. Phys. Lett., 65 (1994) 3362.
- (1994) Appl. Phys. Lett. , vol.65 , pp. 3362
- Whall, T.E.¹ Plews, A.D.² Mattey, N.L.³ Parker, E.H.C.⁴

6
- 4244109721
- J.P. Kotthaus, G. Abstreiter, J.F. Koch and R. Ranvaud, Phys. Rev. Lett., 34 (1975) 151.
- (1975) Phys. Rev. Lett. , vol.34 , pp. 151
- Kotthaus, J.P.¹ Abstreiter, G.² Koch, J.F.³ Ranvaud, R.⁴

7
- 0001913938
- S.Q. Murphy, Z. Schlesinger, S.F. Nelson, J.O. Chu and B.S. Meyerson, Appl Phys. Lett., 63 (1993) 222.
- (1993) Appl Phys. Lett. , vol.63 , pp. 222
- Murphy, S.Q.¹ Schlesinger, Z.² Nelson, S.F.³ Chu, J.O.⁴ Meyerson, B.S.⁵

8
- 35248858533
- C.G. van de Walle and R. Martin, Phys. Rev. B, 34 (1986) 5621.
- (1986) Phys. Rev. B , vol.34 , pp. 5621
- Van De Walle, C.G.¹ Martin, R.²

9
- 84930007676
- J.C. Sturm, P.V. Schwartz, E.J. Prinz and H. Manoharan, J. Vac. Sci. Technol. B, 9 (1991) 2011.
- (1991) J. Vac. Sci. Technol. B , vol.9 , pp. 2011
- Sturm, J.C.¹ Schwartz, P.V.² Prinz, E.J.³ Manoharan, H.⁴

10
- 0346955939
- J.W. Matthews and A.E. Blakeslee, J. Cryst. Growth, 27 (1974) 118.
- (1974) J. Cryst. Growth , vol.27 , pp. 118
- Matthews, J.W.¹ Blakeslee, A.E.²

11
- 28444459024
- F.K. LeGoues, B.S. Meyerson, J.F. Morar and P.D. Kirchner, J. Appl. Phys., 71 (1992) 4230.
- (1992) J. Appl. Phys. , vol.71 , pp. 4230
- LeGoues, F.K.¹ Meyerson, B.S.² Morar, J.F.³ Kirchner, P.D.⁴

12
- 0012928664
- V. Venkataraman, C.W. Liu and J.C. Sturm, J. Vac. Sci. Tech. B, 11 (1993) 1176.
- (1993) J. Vac. Sci. Tech. B , vol.11 , pp. 1176
- Venkataraman, V.¹ Liu, C.W.² Sturm, J.C.³

13
- 36549101235
- M. Jaffe and J. Singh, J. Appl. Phys., 65 (1989) 329.
- (1989) J. Appl. Phys. , vol.65 , pp. 329
- Jaffe, M.¹ Singh, J.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.