Influence of interfaces on crystal growth of Si in SiO2/a-Si/SiO2 layered structures

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 6, 1997, Pages

  Tagami, Takashi ^a   Wakayama, Yutaka ^a   Tanaka, Shun ichiro ^a  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FREE ENERGY; INTERFACES (MATERIALS); NANOSTRUCTURED MATERIALS; SEMICONDUCTOR GROWTH; SILICA; TRANSMISSION ELECTRON MICROSCOPY;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY (HRTEM);

SEMICONDUCTING SILICON;

EID: 0031152294     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l734     Document Type: Article

References (15)