Diffusion model for high-temperature off-state currents in SOI MOSFETs

Microelectronic Engineering

Volumn 36, Issue 1-4, 1997, Pages 367-370

  Rudenko, T E ^a   Kilchitskaya, V I ^a   Rudenko, A N ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; COMPUTER SIMULATION; DIFFUSION IN SOLIDS; ELECTRIC CURRENTS; GATES (TRANSISTOR); HIGH TEMPERATURE PROPERTIES; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY; COMPUTER SOFTWARE; ELECTRIC NETWORK ANALYSIS; ELECTRIC VARIABLES MEASUREMENT; HIGH TEMPERATURE EFFECTS; LEAKAGE CURRENTS; THERMAL DIFFUSION IN SOLIDS;

BACK GATE BIASING; CARRIER DISTRIBUTION; DIFFUSION MODEL; HIGH TEMPERATURE OFF STATE CURRENTS; SOFTWARE PACKAGE MEDICI;

MOSFET DEVICES;

EID: 0031150271     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00081-6     Document Type: Article

References (4)

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4. D.-Su. Jeon, D. E. Burk, IEEE Trans. El. Dev., 38 (1991) 2101.