Identification of the microscopic structure of new hot carrier damage centers in short channel MOSFETs

Microelectronic Engineering

Volumn 36, Issue 1-4, 1997, Pages 271-274

  Billman, C A ^a   Lenahan, P M ^a   Weber, W ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL MICROSTRUCTURE; HOT CARRIERS; INTERFACES (MATERIALS); POROUS SILICON; STRESSES;

HOT CARRIER DAMAGE CENTERS; HOT HOLE STRESSING;

MOSFET DEVICES;

EID: 0031150262     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00062-2     Document Type: Article

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