|
|
Volumn 36, Issue 1-4, 1997, Pages 95-98
|
|
Device physics and simulation of metal/ferroelectric-film/p-type silicon capacitors
|
|
Author keywords
[No Author keywords available]
|
|
Indexed keywords
CARRIER CONCENTRATION;
DIELECTRIC FILMS;
ELECTRIC FIELD EFFECTS;
ELECTROSTATICS;
FERROELECTRIC MATERIALS;
GATES (TRANSISTOR);
SEMICONDUCTING SILICON;
SEMICONDUCTOR DEVICE MODELS;
SUBSTRATES;
CAPACITANCE MEASUREMENT;
COMPUTATIONAL METHODS;
ELECTRIC CHARGE;
ELECTRIC FIELDS;
FERROELECTRIC DEVICES;
SEMICONDUCTOR DEVICE STRUCTURES;
VOLTAGE MEASUREMENT;
CAPACITANCE VOLTAGE CHARACTERISTICS;
FERROELECTRIC FILMS;
METAL FERROELECTRIC SILICON (MFS) CAPACITORS;
POLARIZATION CHARGE DENSITY;
GATE TO BULK VOLTAGE;
METAL/FERROELECTRIC/SILICON (MFS) CAPACITORS;
CAPACITORS;
|
|
EID: 0031150217
PISSN: 01679317
EISSN: None
Source Type: Journal
DOI: 10.1016/S0167-9317(97)00023-3 Document Type: Article |
|
Times cited : (10)
|
|
References (5)
|
