Monolithic integration of an InGaAsP-InP MQW laser/waveguide using a twin-guide structure with a mode selection layer

IEEE Photonics Technology Letters

Volumn 9, Issue 5, 1997, Pages 569-571

  Xu, L ^b   Gokhale, M R ^a,b   Studenkov, P ^b   Dries, J C ^b   Chao, C P ^b   Garbuzov, D ^b   Forrest, S R ^a,b  

^a IEEE

^b PRINCETON UNIVERSITY   (United States)

Author keywords

Integrated optoelectronics; Quantum well lasers; Semiconductor waveguides

Indexed keywords

INTEGRATED OPTOELECTRONICS; LASER MODES; LIGHT ABSORPTION; MONOLITHIC INTEGRATED CIRCUITS; OPTICAL WAVEGUIDES; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS;

MULTIPLE QUANTUM WELL (MQW) LASERS; TWIN GUIDE STRUCTURES;

QUANTUM WELL LASERS;

EID: 0031146777     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.588103     Document Type: Article

References (10)

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