A finite element method for simulating interface motion - I. Migration of phase and grain boundaries

Acta Materialia

Volumn 45, Issue 5, 1997, Pages 1907-1915

  Sun, B ^a,c   Suo, Z ^a   Yang, W ^b  

^a University of California   (United States)

^b TSINGHUA UNIVERSITY   (China)

^c Applied Magnetics Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ATOMS; CRYSTAL GROWTH; FINITE ELEMENT METHOD; FREE ENERGY; GRAIN BOUNDARIES; MATHEMATICAL MODELS; PHASE INTERFACES; POLYCRYSTALS; SINGLE CRYSTALS; SURFACE TENSION; VISCOSITY;

NONEQUILIBRIUM TRIPLE JUNCTIONS;

INTERFACES (MATERIALS);

EID: 0031146427     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1359-6454(96)00323-0     Document Type: Article

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