-
1
-
-
0021640256
-
A new flash EEPROM cell using triple polysilicon technology
-
F. Masuoka, M. Asano, H. Iwahasai, T. Komuro, and S. Tanaka, "A new flash EEPROM cell using triple polysilicon technology," Tech. Dig. IEDM, pp 464-467, 1984.
-
(1984)
Tech. Dig. IEDM
, pp. 464-467
-
-
Masuoka, F.1
Asano, M.2
Iwahasai, H.3
Komuro, T.4
Tanaka, S.5
-
2
-
-
0021640260
-
Conduction in thermal oxides grown on polysilicon and its influence on floating gate EEPROM degradation
-
G. Groeseneken and H. E. Maes, "Conduction in thermal oxides grown on polysilicon and its influence on floating gate EEPROM degradation," Tech. Dig. IEDM, pp. 476-479, 1984.
-
(1984)
Tech. Dig. IEDM
, pp. 476-479
-
-
Groeseneken, G.1
Maes, H.E.2
-
3
-
-
0022298385
-
The effects of write erase cycling on data loss in EEPROM's
-
D. A. Baglee and M. C. Smayling, "The effects of write erase cycling on data loss in EEPROM's," Tech. Dig. IEDM, pp. 624-627, 1985.
-
(1985)
Tech. Dig. IEDM
, pp. 624-627
-
-
Baglee, D.A.1
Smayling, M.C.2
-
4
-
-
0024170325
-
Stress induced leakage current limiting to scale down EEPROM tunnel oxide thickness
-
K. Naruke, S. Taguchi, and M. Wada, *Stress induced leakage current limiting to scale down EEPROM tunnel oxide thickness," Tech. Dig. IEDM, pp. 424-427, 1988.
-
(1988)
Tech. Dig. IEDM
, pp. 424-427
-
-
Naruke, K.1
Taguchi, S.2
Wada, M.3
-
5
-
-
0028564365
-
An 18Mb serial flash EEPROM for solid-state disk applications
-
June
-
D. J. Lee, R. A. Cernea, M. Mofidi, S. Mehrotra, E. Y. Chang, W. Y. Chien, L. Goh, J. H. Yuan, A. Mihnea, G. Samachisa, Y. Fong, D. C. Guterman, and R. D. Norman, "An 18Mb serial flash EEPROM for solid-state disk applications," in Symp. VLSI Circuits, Dig. Tech. Papers, June 1994, pp. 59-60.
-
(1994)
Symp. VLSI Circuits, Dig. Tech. Papers
, pp. 59-60
-
-
Lee, D.J.1
Cernea, R.A.2
Mofidi, M.3
Mehrotra, S.4
Chang, E.Y.5
Chien, W.Y.6
Goh, L.7
Yuan, J.H.8
Mihnea, A.9
Samachisa, G.10
Fong, Y.11
Guterman, D.C.12
Norman, R.D.13
-
7
-
-
0025505721
-
A 50-ns 16-Mb DRAM with a 10-ns Data Rate and On-Chip ECC
-
H. L. Kalter, C. H. Staper, J. E. Barth, Jr., J. DiLorenzo, C. E. Drake, J. A. Fifield, G. A. Kelley, Jr., S. C. Lewis, W. B. Van Der Hoeven, and J. A. Yankosky, "A 50-ns 16-Mb DRAM with a 10-ns Data Rate and On-Chip ECC," IEEE J. Solid-State Circuits, vol. 25, pp. 1118-1128, 1990.
-
(1990)
IEEE J. Solid-State Circuits
, vol.25
, pp. 1118-1128
-
-
Kalter, H.L.1
Staper, C.H.2
Barth Jr., J.E.3
DiLorenzo, J.4
Drake, C.E.5
Fifield, J.A.6
Kelley Jr., G.A.7
Lewis, S.C.8
Van Der Hoeven, W.B.9
Yankosky, J.A.10
-
8
-
-
0003525992
-
-
Cambridge, MA, MIT Press
-
W. W. Peterson and E. J. Weldon, Error-Correcting Codes, 2nd ed. Cambridge, MA, MIT Press, 1972.
-
(1972)
Error-Correcting Codes, 2nd Ed.
-
-
Peterson, W.W.1
Weldon, E.J.2
-
9
-
-
0025451991
-
A 35 ns 256k CMOS EEPROM with Error correcting circuitry
-
Feb.
-
R. Vancu, L. Chen, R. L. Wan, T. Nguyen, C. Y. Yang, W. P. Lai, K. F. Tang, A. Mihnea, A. Renninger, and G. Smarandoiu, "A 35 ns 256k CMOS EEPROM with Error correcting circuitry," in ISSCC Dig. Tech. Papers, Feb. 1990, pp. 64-65.
-
(1990)
ISSCC Dig. Tech. Papers
, pp. 64-65
-
-
Vancu, R.1
Chen, L.2
Wan, R.L.3
Nguyen, T.4
Yang, C.Y.5
Lai, W.P.6
Tang, K.F.7
Mihnea, A.8
Renninger, A.9
Smarandoiu, G.10
-
10
-
-
0024175625
-
A 5 V only 1 Tr. 256K EEPROM with page mode erase
-
June
-
T. Nakayama, Y. Miyawaki, K. Kobayashi, Y. Terada, H. Arima, T. Matsukawa, and T. Yoshihara, "A 5 V only 1 Tr. 256K EEPROM with page mode erase," in Symp. VLSI Circuits, Dig. Tech. Papers, June 1988, pp. 81-82.
-
(1988)
Symp. VLSI Circuits, Dig. Tech. Papers
, pp. 81-82
-
-
Nakayama, T.1
Miyawaki, Y.2
Kobayashi, K.3
Terada, Y.4
Arima, H.5
Matsukawa, T.6
Yoshihara, T.7
-
11
-
-
0029720133
-
A compact on-chip ECC for low cost flash memories
-
June
-
T. Tanzawa, T. Tanaka, K. Takeuchi, R. Shirota, S. Aritome, H. Watanabe, G. Hemink, K. Shimizu, S. Sato, Y. Takeuchi, and K. Ohuchi, "A compact on-chip ECC for low cost flash memories," in Symp. VLSI Circuits, Dig. Tech. Papers, June 1996, pp. 59-60.
-
(1996)
Symp. VLSI Circuits, Dig. Tech. Papers
, pp. 59-60
-
-
Tanzawa, T.1
Tanaka, T.2
Takeuchi, K.3
Shirota, R.4
Aritome, S.5
Watanabe, H.6
Hemink, G.7
Shimizu, K.8
Sato, S.9
Takeuchi, Y.10
Ohuchi, K.11
-
12
-
-
20244373743
-
A 35 ns-cycle-time 3.3 V only 32Mb NAND flash EEPROM
-
Nov.
-
Y. Iwata, K. Imamiya, Y. Sugiura, H. Nakamura, H. Oodaira, M. Momodomi, Y. Ito, T. Watanabe, H. Araki, K. Narita, K. Masuda, and J. Miyamoto, "A 35 ns-cycle-time 3.3 V only 32Mb NAND flash EEPROM," IEEE J. Solid-State Circuits, vol. 30, pp. 1157-1164, Nov. 1995.
-
(1995)
IEEE J. Solid-State Circuits
, vol.30
, pp. 1157-1164
-
-
Iwata, Y.1
Imamiya, K.2
Sugiura, Y.3
Nakamura, H.4
Oodaira, H.5
Momodomi, M.6
Ito, Y.7
Watanabe, T.8
Araki, H.9
Narita, K.10
Masuda, K.11
Miyamoto, J.12
-
13
-
-
0029404872
-
A 3.3 V 32Mb NAND flash memory with incremental step pulse programming scheme
-
Nov.
-
K. D. Suh, B. H. Suh, Y. H. Lim, J. K. Kim, Y. J. Choi, Y. N. Koh, S. S. Lee, S. C. Kwon, B. S. Choi, J. S. Yum, J. H. Choi, J. R Kim, H. K. Lim, "A 3.3 V 32Mb NAND flash memory with incremental step pulse programming scheme," IEEE J. Solid-State Circuits, vol. 30, pp. 1149-1156, Nov. 1995.
-
(1995)
IEEE J. Solid-State Circuits
, vol.30
, pp. 1149-1156
-
-
Suh, K.D.1
Suh, B.H.2
Lim, Y.H.3
Kim, J.K.4
Choi, Y.J.5
Koh, Y.N.6
Lee, S.S.7
Kwon, S.C.8
Choi, B.S.9
Yum, J.S.10
Choi, J.H.11
Kim, J.R.12
Lim, H.K.13
-
14
-
-
0028752012
-
2 self-aligned shallow trench solation cell (SA-STI) for 3 V-only 256Mbit NAND EEPROM's
-
2 self-aligned shallow trench solation cell (SA-STI) for 3 V-only 256Mbit NAND EEPROM's," Tech. Dig. IEDM, pp. 61-64, 1994.
-
(1994)
Tech. Dig. IEDM
, pp. 61-64
-
-
Aritome, S.1
Satoh, S.2
Maruyama, T.3
Watanabe, H.4
Shuto, S.5
Hemink, G.J.6
Shirota, R.7
Watanabe, S.8
Masuoka, F.9
|