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Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 919-923

Resonant tunnelling of holes in double barrier heterostructures grown by MBE on (1 1 o) oriented GaAs substrates

(6) Henini, M a Hayden, R K b Takamasu, T b Miura, N b Eaves, L a Hill, G c

a UNIVERSITY OF NOTTINGHAM (United Kingdom)

b UNIVERSITY OF TOKYO (Japan)

c UNIVERSITY OF SHEFFIELD (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; BERYLLIUM; CRYSTAL ORIENTATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON RESONANCE; ELECTRON TUNNELING; MAGNETIC FIELD EFFECTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

RESONANT TUNNELLING;

HETEROJUNCTIONS;

EID: 0031146253 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)00885-8 Document Type: Article

Times cited : (2)

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