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Journal of Crystal Growth

Volumn 175-176, Issue PART 1, 1997, Pages 178-183

Real space imaging of GaAs/AlAs (0 0 1) heterointerfaces

(5) Behrend, J a Wassermeier, M a Braun, W a Krispin, P a Ploog, K H a

a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; IMAGING TECHNIQUES; MOLECULAR BEAM EPITAXY; MORPHOLOGY; POINT DEFECTS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

ULTRAHIGH VACUUM SCANNING TUNNELING MICROSCOPY (UHV STM);

HETEROJUNCTIONS;

EID: 0031146250 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)01178-5 Document Type: Article

Times cited : (5)

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