High-speed InGaAs metal-semiconductor-metal photodetectors with thin absorption layers

IEEE Photonics Technology Letters

Volumn 9, Issue 5, 1997, Pages 654-656

  Wohlmuth, W A ^a,b   Fay, P ^a,b   Vaccaro, K ^c   Martin, E A ^a,c   Adesida, I ^a,b  

^a IEEE   (United States)

^b University of Illinois at Urbana Champaign   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

Metal semiconductor metal (MSM); Photodetectors; Photodiodes

Indexed keywords

BANDWIDTH; FREQUENCY RESPONSE; LIGHT ABSORPTION; LIGHT SENSITIVE MATERIALS; OPTICAL MULTILAYERS; PHOTODIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

METAL SEMICONDUCTOR METAL (MSM) PHOTODETECTORS;

PHOTODETECTORS;

EID: 0031145179     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.588184     Document Type: Article

References (8)

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