Surface-phonon characterization of InP, GaP and GaAs quantum dots confined in dielectric hosts

Journal of Physics D: Applied Physics

Volumn 30, Issue 10, 1997, Pages 1432-1435

  Henderson, D O ^a   Ueda, A ^a   Tung, Y S ^a   Mu, R ^a   White, W C ^b   Zuhr, R A ^b   Zhu, Jane G ^b  

^a FISK UNIVERSITY   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHARACTERIZATION; ION IMPLANTATION; MOLECULAR VIBRATIONS; NONDESTRUCTIVE EXAMINATION; PHONONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE;

FAR INFRARED REFLECTANCE TECHNIQUE; SURFACE PHONON CHARACTERIZATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0031145127     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/30/10/007     Document Type: Article

References (21)

1. Ruppin R and Englman R 1970 Rep. Prog. Phys. 33 149
2. Ruppin R 1982 Electromagnetic Surface Modes ed A D Boardman (New York: Wiley) ch 9, pp 345-98
3. Hayashi S 1984 Japan. J. Appl. Phys. 23 665 and references therein
4. For example Wang Y and Nerron N 1987 J. Phys. Chem. 91 5005 Micic O I, Li Z, Mills G, Sullivan J C and Meisel D 1987 J. Phys. Chem. 91 6221 Sandroff C J, Kelty S P and Hwang D M 1986 J. Phys. Chem. 85 5337
5. For example Wang Y and Nerron N 1987 J. Phys. Chem. 91 5005 Micic O I, Li Z, Mills G, Sullivan J C and Meisel D 1987 J. Phys. Chem. 91 6221 Sandroff C J, Kelty S P and Hwang D M 1986 J. Phys. Chem. 85 5337
6. For example Wang Y and Nerron N 1987 J. Phys. Chem. 91 5005 Micic O I, Li Z, Mills G, Sullivan J C and Meisel D 1987 J. Phys. Chem. 91 6221 Sandroff C J, Kelty S P and Hwang D M 1986 J. Phys. Chem. 85 5337
7. Micic O I, Curtis C J, Jones K M, Sprague J R and Nozik AJ 1994 J. Phys. Chem. 98 4966
8. Wells R L, Aubuchon S R, Kher S S and Lube MS 1995 Chem. Mater. 7 793
9. Warmock J and Awschalom D D 1985 Phys. Rev. B 32 5529 Henderson D O, Mu R, Ueda A, Burger A, Chen K T and Frazier D O 1995 Mater. Res. Soc. Symp. Proc. 366 283
10. Warmock J and Awschalom D D 1985 Phys. Rev. B 32 5529 Henderson D O, Mu R, Ueda A, Burger A, Chen K T and Frazier D O 1995 Mater. Res. Soc. Symp. Proc. 366 283
11. For example Fujii M, Hayashi S and Yamakoto K 1990 Appl. Phys. Lett. 57 2692 Sasaki Y and Horie C 1993 Phys. Rev. B 48 2009
12. For example Fujii M, Hayashi S and Yamakoto K 1990 Appl. Phys. Lett. 57 2692 Sasaki Y and Horie C 1993 Phys. Rev. B 48 2009
13. For example White C W, Budai J D, Zhu J G, Withrow S P, Zuhr R A, Chen Y, Hembree D M Jr., Magruder R H and Henderson D O 1995 Mater. Res. Soc. Symp. Proc. 358 175 White C W, Budai J D, Zhu J G, Withrow S P, Hembree D M Jr, Henderson D O, Ueda A, Tung Y S, Mu R and Magruder R H 1996 J. Appl. Phys. 79 1876 Mu R, Henderson D O, Tung Y S, Ueda A, White C W, Zuhr R A and Zhu G J J. Vac. Sci. Technol. A14 1482
14. For example White C W, Budai J D, Zhu J G, Withrow S P, Zuhr R A, Chen Y, Hembree D M Jr., Magruder R H and Henderson D O 1995 Mater. Res. Soc. Symp. Proc. 358 175 White C W, Budai J D, Zhu J G, Withrow S P, Hembree D M Jr, Henderson D O, Ueda A, Tung Y S, Mu R and Magruder R H 1996 J. Appl. Phys. 79 1876 Mu R, Henderson D O, Tung Y S, Ueda A, White C W, Zuhr R A and Zhu G J J. Vac. Sci. Technol. A14 1482
15. For example White C W, Budai J D, Zhu J G, Withrow S P, Zuhr R A, Chen Y, Hembree D M Jr., Magruder R H and Henderson D O 1995 Mater. Res. Soc. Symp. Proc. 358 175 White C W, Budai J D, Zhu J G, Withrow S P, Hembree D M Jr, Henderson D O, Ueda A, Tung Y S, Mu R and Magruder R H 1996 J. Appl. Phys. 79 1876 Mu R, Henderson D O, Tung Y S, Ueda A, White C W, Zuhr R A and Zhu G J J. Vac. Sci. Technol. A14 1482
16. Maslin K A, Patel C and Parker T J 1991 Infrared Phys. 32 303
17. Trommer R, Muller H and Cardona M 1980 Phys. Rev. B 21 4869
18. Trommer R, Muller H and Cardona M 1980 Phys. Rev. B 21 4879
19. Li S, Van Zee R J and Welner W Jr 1994 J. Chem. Phys. 98 2275
20. Holm R T, Gibson J W and Palik E D 1977 J. Appl. Phys. 48 212
21. Fuchs R 1975 Phys. Rev. B 11 1732