Transient surface states during the CBE growth of GaAs

Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 1217-1222

  Farrell, T ^a   Hill, D ^a   Joyce, T B ^a   Bullough, T J ^a   Weightman, P ^a  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

CBE growth; GaAs; RAS

Indexed keywords

CHEMICAL BEAM EPITAXY; CRYSTAL ORIENTATION; OSCILLATIONS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES;

BEAM EQUIVALENT PRESSURE (BEP); REFLECTANCE ANISOTROPY SPECTROSCOPY (RAS);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031144974     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00962-1     Document Type: Article

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