New approach to two-dimensional semiconductor device simulation on curvilinear grids

Solid-State Electronics

Volumn 41, Issue 5, 1997, Pages 789-792

  Patil, M B ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY KANPUR   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; INTERPOLATION; NONLINEAR EQUATIONS;

CURVILINEAR GRIDS;

SEMICONDUCTOR DEVICE MODELS;

EID: 0031144969     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(96)00173-6     Document Type: Article

References (6)

1. Selberherr, S., Analysis and Simulation of Semiconductor Devices, Springer-Verlag, New York, 1984.
2. Tago, K., Semiconductor device simulation method using boundary-fitted curvilinear coordinates and the Voronoi discretization, Electronics and Communications in Japan, 1988, 71(7), 65-76.
3. Matsuo, H., Tanaka, J., Mishima, A., Tago, K. and Toyabe, T., Three-dimensional device simulation with arbitrary curved boundaries using the Voronoi discretization method, in Proc. Int. Conf. on Simulation of Semiconductor Devices and Processes (SISDEP), Zurich, Switzerland, 1991, pp. 157-163.
4. Thompson, J. F., Warsi, Z. U. A. and Mastin, C. W., Numerical Grid Generation: Foundations and Applications, North-Holland, 1985.
5. Zhu, J., Rodi, W. and Schoenung, B., Algebraic generation of smooth grids, in Numerical Grid Generation in Computational Fluid Dynamics, ed. S. Sengupta et al. Pineridge Pr. Swansea, 1988.
6. Pinto, M. R., Rafferty, C. S. and Dutton, R. W., PISCES II - Poisson and continuity equation solver, Tech. Rep. Stanford University, September 1984.