Molecular beam epitaxial growth of InGaAs/InGaAsP quantum wires on V-grooved InP substrates with (1 1 1) sidewalls

Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 793-798

  Wang, J ^a   Thompson, D A ^a   Robinson, B J ^a   Simmons, J G ^a  

^a MCMASTER UNIVERSITY   (Canada)

Author keywords

InGaAs; InGaAsP; MBE; Polarization; Quantum wire; V groove

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL ORIENTATION; ETCHING; LIGHT POLARIZATION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY;

SELECTIVE ETCHING;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0031144937     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00951-7     Document Type: Article

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