Heat transfer/thermal stress analysis of semiconductors under transient conditions

Modelling and Simulation in Materials Science and Engineering

Volumn 5, Issue 3, 1997, Pages 245-258

  Sharan, A M ^a   Dhar, D ^a   Seshadri, R ^a  

^a MEMORIAL UNIVERSITY OF NEWFOUNDLAND   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; HEAT TRANSFER; SHEAR STRESS; STRESS ANALYSIS; THERMAL GRADIENTS; THERMAL STRESS;

CRITICAL RESOLVED SHEAR STRESS ANALYSIS; THREE DIMENSIONAL TRANSIENT HEAT TRANSFER ANALYSIS;

SILICON WAFERS;

EID: 0031144846     PISSN: 09650393     EISSN: None     Source Type: Journal    
DOI: 10.1088/0965-0393/5/3/004     Document Type: Article

References (23)

1. Bentini G, Correra L and Donolato C 1984 Defects introduced in silicon wafers during rapid isothermal annealing: thermoelastic and thermoplastic effects J. Appl. Phys. 56 2922-9
2. Brice J C 1968 Analysis of the temperature distribution in pulled crystals J. Crystal Growth 2 395-401
3. Cook R D 1981 Concepts and Applications of Finite Element Analysis (New York: Wiley) pp 113-21
4. Dhar D 1995 Fatigue life estimation of turbine blades due to transient thermal, vibratory and centrifugal stresses MEng Thesis Memorial University of Newfoundland, Canada
5. Dieter G E 1970 Mechanical Metallurgy (New York: Mcgraw-Hill) pp 28-37
6. Duseaux M 1983 Temperature profile and thermal stress calculation in GaAs crystals growing from the melt J. Crystal Growth 61 576-90
7. Hu S M 1969 Temperature distribution and stresses in circular wafers in a row during radiative cooling J. Appl. Phys. 40 4413-23
8. Huebner K H and Thornton E A 1982 The Finite Element Method for Engineers (New York: Wiley) p 187
9. Jordan A S, Monberg E M and Clemans J E 1993 Thermal stress theory of dislocation reduction in the vertical gradient freeze (VGF) growth of GaAs and InP J. Crystal Growth 128 444-50
10. Jordan A S, Caruso R, Von Neida A R and Nielson J W 1981 A comparitive study of thermal stress induced dislocation generation in pulled GaAs, InP, and Si crystals J. Appl. Phys. 52 3331
11. Miyazaki N, Uchida H, Haghira S and Munakata T 1991 Thermal stress analysis of bulk single crystal during Czochralski growth - comparison between anisotropic analysis and isotropic analysis J. Crystal Growth 113 227-41
12. Mokuya K and Matsuba I 1989 Prediction of defect onset conditions in heat cycling based on a thermoelastic wafer model IEEE Trans. Electron Devices 36 319-27
13. Mokuya et al 1986 Thermal stresses in wafers in a row during the transient periods of heat cycling in a furnace for semiconductor fabrication processes Proc. JSST Int. Conf. (1986) pp 509
14. Morizane, Kenji and Gleim P S 1969 Thermal stress and plastic deformation of thin silicon slices J. Appl. Phys. 40 4104-7
15. O'Mara W C, Herring R B and Hunt L P 1990 Handbook of Semiconductor Silicon Technology (Princeton, NJ: Noyes)
16. Prasad G and Srivastava O N 1993 Flash Annealing - A New Process for Based Photoelectrochemical Solar Cells (Bristol: IOP Publishing) pp 2161-7
17. Segerlind L J 1976 Applied Finite Element Analysis (New York: Wiley) pp 71-7
18. _1976 Applied Finite Element Analysis (New York: Wiley) pp 212-22
19. _1976 Applied Finite Element Analysis (New York: Wiley) pp 232-6
20. Subramaniam N and Tsai C T 1995 Dislocation reduction in GaAS crystals grown from the Czochralski process J. Mater. Proc. Technol. 55 278-87
21. Tsai C T and Subramaniam N 1995 The numerical modelling of dislocation generation in semiconductor crystals during Czochralski growth Modelling Simul. Mater. Sci. Eng. 3 93-105
22. Yonenaga I and Sumino K 1984 Mechanical strength of silicon crystals as a function of oxygen concentration J. Appl. Phys. 56 2346-50
23. Zienkiewicz O C 1970 The Finite Element Method in Engineering Science (New York: Mcgraw-Hill) pp 48-72