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Journal of Crystal Growth

Volumn 175-176, Issue PART 1, 1997, Pages 298-303

A new in situ III-V surface characterization technique: Chemical modulation spectroscopy

(4) Postigo, P A a Utzmeier, T a Armelles, G a Briones, F a

a INSTITUTO DE MICROELECTRÓNICA DE MADRID (Spain)

Author keywords

Characterization; In situ; MBE; Optical

Indexed keywords

ANISOTROPY; HIGH TEMPERATURE EFFECTS; LIGHT POLARIZATION; MOLECULAR BEAMS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR GROWTH; SPECTROSCOPIC ANALYSIS; STOICHIOMETRY; SUBSTRATES; SURFACE STRUCTURE;

ATOMIC LAYER MOLECULAR BEAM EPITAXY (ALMBE); CHEMICAL MODULATION SPECTROSCOPY;

MOLECULAR BEAM EPITAXY;

EID: 0031144248 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)00942-6 Document Type: Article

Times cited : (7)

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