Engineering of the nonradiative transition rates in nonpolar modulation-doped multiple quantum wells

Journal of the Optical Society of America B: Optical Physics

Volumn 14, Issue 5, 1997, Pages 1043-1047

  Veliadis, J V D ^a,b   Khurgin, J B ^a  

^a Johns Hopkins University   (United States)

^b Nanocrystals Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTICS; CARRIER CONCENTRATION; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; LASERS; LIGHT SCATTERING; OPTICAL PROPERTIES; PHONONS; RELAXATION PROCESSES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; VECTORS;

IMPURITY SCATTERING; INTERSUBBAND RELAXATION RATE; LASING TRANSITION; NONRADIATIVE TRANSITION RATE; POPULATION INVERSION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031143921     PISSN: 07403224     EISSN: None     Source Type: Journal    
DOI: 10.1364/JOSAB.14.001043     Document Type: Article

References (19)

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