A numerical model for the complex susceptibility of saturated erbium-doped amplifiers

IEEE Journal of Quantum Electronics

Volumn 33, Issue 5, 1997, Pages 855-860

  Alameh, Kamal E ^a,b,c,d   Minasian, Robert A ^{a,c,d,e,f,g,h}   Zhao, Yuxing ^a,d,i,j  

^a UNIVERSITY OF SYDNEY   (Australia)

^b BEIRUT ARAB UNIVERSITY   (Lebanon)

^c UNIVERSITY OF MELBOURNE   (Australia)

^d UNIVERSITY OF SYDNEY   (Australia)

^e UNIVERSITY COLLEGE LONDON   (United Kingdom)

^f Australian Photonics Coop Res Ctr   (Australia)

^g UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^h Engineers Australia   (Australia)

ⁱ SUZHOU UNIVERSITY   (China)

^j SHANGHAI INSTITUTE OF OPTICS AND FINE MECHANICS   (China)

more..

Author keywords

Doped amplifier susceptibility modeling

Indexed keywords

DOPED AMPLIFIER SUSCEPTIBILITY MODELING; STARK SPLIT ENERGY LEVEL; VOIGT LINESHAPES;

ALGORITHMS; CURVE FITTING; INTEGRATED OPTICS; LIGHT ABSORPTION; LIGHT EMISSION; REFRACTIVE INDEX; SEMICONDUCTOR DEVICE MODELS; SENSITIVITY ANALYSIS; SPECTRUM ANALYSIS;

FIBER LASERS;

EID: 0031143802     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.572161     Document Type: Article

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