Investigation of Si as an n-type dopant in AlGaAs grown by molecular beam epitaxy on high index planes

Semiconductor Science and Technology

Volumn 12, Issue 5, 1997, Pages 555-563

  Galbiati, N ^a   Grilli, E ^a   Guzzi, M ^a   Albertini, P ^a   Brusaferri, L ^a   Pavesi, L ^b   Henini, M ^c   Gasparotto, A ^d  

^a UNIVERSITY OF MILAN   (Italy)

^b UNIVERSITY OF TRENTO   (Italy)

^c UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^d UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL ORIENTATION; ELECTRIC CONDUCTIVITY; ELECTRIC CONDUCTIVITY MEASUREMENT; MOLECULAR BEAM EPITAXY; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SURFACE STRUCTURE;

DEFECT EMISSION; EXCITONIC STRUCTURE; HALL MOBILITY; SILICON CONCENTRATION; SURFACE ORIENTATION;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0031143694     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/5/007     Document Type: Article

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