Endpoint prediction for polysilicon plasma etch via optical emission interferometry

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 15, Issue 3, 1997, Pages 1403-1408

  Wong, K ^a,b   Boning, D S ^a   Sawin, H H ^a   Butler, S W ^a,c   Sachs, E M ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b NOVELLUS SYSTEMS INC   (United States)

^c TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTROL DECISIONS; COSINE FUNCTIONS; CRITICAL INFORMATION; DATA POINTS; ENDPOINT PREDICTION; ETCH PROCESS; ETCH RATES; EXPERIMENTAL DATA; FILM STRUCTURE; IN-SITU; INTERFEROMETRIC SIGNALS; LINEAR PHASE; NUMBER OF CYCLES; OPTICAL EMISSIONS; PATTERNED FILMS; PHASE ANGLES; PLASMA ETCH; REAL TIME MONITORING; REASONABLE ACCURACY; SEMICONDUCTOR MANUFACTURING; SHORTER WAVELENGTH; THICKNESS ESTIMATION; TIMED PROCESS; WAFER SURFACE;

COSINE TRANSFORMS; EMISSION SPECTROSCOPY; ESTIMATION; INTERFEROMETRY; LADLE METALLURGY; LIGHT EMISSION; OPTICAL EMISSION SPECTROSCOPY; POLYSILICON; SILICON WAFERS; THICKNESS MEASUREMENT; ALGORITHMS; COMPUTER SIMULATION; CRYSTAL STRUCTURE; REFRACTIVE INDEX; SENSITIVITY ANALYSIS;

PROCESS CONTROL; PLASMA ETCHING;

ENDPOINT PREDICTION; OPTICAL EMISSION INTERFEROMETRY; POLYSILICON;

EID: 0031143606     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580550     Document Type: Article

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