Quantitative analysis of SiC polytype distributions by the Rietveld method

Journal of Materials Science

Volumn 32, Issue 10, 1997, Pages 2661-2664

  Liu, Hongchao ^a   Kuo, Changlin ^a  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; PERFORMANCE; STACKING FAULTS; X RAY POWDER DIFFRACTION;

PATTERN FITTING TECHNIQUE; RIETVELD METHOD; SILICON CARBIDE POLYTYPE DISTRIBUTIONS; STANDARD DEVIATION; X RAY DIFFRACTION QUANTITATIVE ANALYSIS METHOD;

SILICON CARBIDE;

EID: 0031143209     PISSN: 00222461     EISSN: None     Source Type: Journal    
DOI: 10.1023/a:1018623122324     Document Type: Article

References (7)

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3. R. J. HILL, Powder Diffraction 6 (1991) 74.
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5. Idem, ibid 23 (1952) 1059.
6. LIU HONGCHAO and KUO CHANGLIN, Mater. Lett. 26 (1996) 171.
7. B. PALOSZ, S. STEL'MAKH and S. GIERLOTKA, Z. Kristallogr. 210 (1995) 731.