Formation of GeSi alloy at or near the surface of Si wafers for the Si/Ge/Si system by the electron-beam doping method

Physica Status Solidi (A) Applied Research

Volumn 161, Issue 1, 1997, Pages 133-142

  Wada, T ^a   Fujimoto, H ^a   Sobue, S ^b   Masuda, H ^c  

^a DAIDO UNIVERSITY   (Japan)

^b DENSO CORPORATION   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; ELECTRON BEAMS; SEMICONDUCTOR DOPING; SILICON WAFERS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRON BEAM DOPING; GERMANIUM SILICON ALLOYS;

GERMANIUM ALLOYS;

EID: 0031142249     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(199705)161:1<133::AID-PSSA133>3.0.CO;2-E     Document Type: Article

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