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Journal of Crystal Growth

Volumn 175-176, Issue PART 1, 1997, Pages 352-358

MBE growth of highly reproducible VCSELs

(2) Houng, Y M a Tan, M R T a

a HEWLETT PACKARD LABORATORIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; FABRY-PEROT INTERFEROMETERS; FEEDBACK CONTROL; MOLECULAR BEAM EPITAXY; PYROMETERS; RESONANCE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; THICKNESS CONTROL;

DISTRIBUTED BRAGG REFLECTORS (DBR); FABRY PEROT RESONANCE; GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE); VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0031141817 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)00881-0 Document Type: Article

Times cited : (4)

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- to be published
- Y.M. Houng, M.R.T. Tan and S. W. Corzine, to be published.
- Houng, Y.M.¹ Tan, M.R.T.² Corzine, S.W.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.