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Volumn 102, Issue 8, 1997, Pages 579-582

Binding energy of negatively charged excitons in semiconductor quantum well with uniform electric field

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; ELECTRIC CHARGE; ELECTRIC FIELDS; EXCITONS; SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031141782     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(97)00046-X     Document Type: Article
Times cited : (2)

References (22)
  • 11
    • 0342683140 scopus 로고
    • Edited by D.J. Lockwood, World Scientific, Singapore, New Jersey, London, Hong Kong
    • Stébé, B., Munschy, G., Fristot, D. and Stauffer, L., 22nd Int. Conf. Phys. Semicond., Vol. 2 (Edited by D.J. Lockwood), p. 1408. World Scientific, Singapore, New Jersey, London, Hong Kong, 1995.
    • (1995) 22nd Int. Conf. Phys. Semicond. , vol.2 , pp. 1408
    • Stébé, B.1    Munschy, G.2    Fristot, D.3    Stauffer, L.4
  • 13


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.