Third-order nonlinear optical susceptibility of wide-bandgap nitrides

Semiconductor Science and Technology

Volumn 12, Issue 5, 1997, Pages 544-549

  Nayak, S K ^a   Sahu, T ^a   Mohanty, S P ^a   Misra, P K ^b  

^a BERHAMPUR UNIVERSITY   (India)

^b and Mass Communication   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CALCULATIONS; CHEMICAL BONDS; EIGENVALUES AND EIGENFUNCTIONS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; OPTICAL PROPERTIES; SEMICONDUCTOR MATERIALS;

AVERAGE ENERGY GAP ANSATZ; CONDUCTION BAND STATE; HALL-WEAIRE AND THORPE APPROXIMATION; HYBRID METHODS; THIRD ORDER NONLINEAR OPTICAL SUSCEPTIBILITY; VALENCE BAND STATE; WIDE BANDGAP NITRIDE;

NITRIDES;

EID: 0031141347     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/5/005     Document Type: Article

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