Simultaneous in situ measurement of substrate temperature and layer thickness using diffuse reflectance spectroscopy (DRS) during molecular beam epitaxy

Journal of Crystal Growth

Volumn 175-176, Issue PART 1, 1997, Pages 250-255

  Li, Y ^a   Zhou, J J ^a   Thompson, P ^a   Pacheco, D ^a   Sato, D L ^a   Arain, O ^a   Lee, H P ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Diffused reflectance spectroscopy; In situ measurement; Layer thickness; Temperature

Indexed keywords

INTERFEROMETRY; MOLECULAR BEAM EPITAXY; PYROMETRY; REAL TIME SYSTEMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; THICKNESS MEASUREMENT;

DIFFUSED REFLECTANCE SPECTROSCOPY (DRS); PYROMETRIC INTERFEROMETRY (PI);

SEMICONDUCTING FILMS;

EID: 0031141293     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01234-1     Document Type: Article

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