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Volumn 10, Issue 3, 1997, Pages
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Behind the scenes of GaN development
a
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Author keywords
[No Author keywords available]
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Indexed keywords
CATALYSTS;
EPITAXIAL GROWTH;
FIELD EFFECT TRANSISTORS;
FOUNDRIES;
GIBBS FREE ENERGY;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
OPTOELECTRONIC DEVICES;
PRESSURE EFFECTS;
SEMICONDUCTOR DEVICE MANUFACTURE;
SUBSTRATES;
THERMAL EFFECTS;
DEFENSE UNIVERSITY RESEARCH INSTRUMENTATION PROGRAMME (DURIP);
GALLIUM NITRIDES (GAN);
HETEROJUNCTION FIELD EFFECT TRANSISTORS (HFET);
SEMICONDUCTING GALLIUM COMPOUNDS;
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EID: 0031140337
PISSN: 09611290
EISSN: None
Source Type: Journal
DOI: 10.1016/s0961-1290(97)85647-5 Document Type: Article |
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Times cited : (1)
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References (0)
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