Origin of SiC precipitation during the micro-pulling-down processing of Si-Ge fibers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 5 A, 1997, Pages 2788-2791

  Epelbaum, Boris M ^a   Gurjiyants, Pavel A ^b   Inaba, Katsuhiko ^a   Shimamura, Kiyoshi ^a   Uda, Satoshi ^a   Kon, Junichi ^a   Fukuda, Tsuguo ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

Author keywords

Fiber crystal; Germanium; Melt; Micro pulling down method; Precipitation; Silicon; Silicon carbide

Indexed keywords

FIBER CRYSTALS; MICROPULLING DOWN GROWTH;

ARGON; CARBON MONOXIDE; CHEMICAL MODIFICATION; COMPOSITION EFFECTS; EVAPORATION; FIBERS; GERMANIUM; PRECIPITATION (CHEMICAL); SILICON; SILICON CARBIDE;

CRYSTAL GROWTH FROM MELT;

EID: 0031139431     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.2788     Document Type: Article

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