Procedure to minimize interface-state errors in MIS doping profile determinations

Solid-State Electronics

Volumn 41, Issue 4, 1997, Pages 515-518

  Koukab, A ^a   Bath, A ^a  

^a UNIVERSITÉ DE LORRAINE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CRYSTAL DEFECTS; ELECTRIC INSULATORS; INTERFACES (MATERIALS); SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SUBSTRATES;

INTERFACE STATE ERRORS;

MIS DEVICES;

EID: 0031126166     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(96)00196-7     Document Type: Article

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