Lateral transport in a structure with two tunnelling-coupled quantum wells in a transverse electric field

Semiconductor Science and Technology

Volumn 12, Issue 4, 1997, Pages 427-430

  Birjulin, P I ^a   Grishechkina, S P ^a   Ignatiev, A S ^a   Kopaev, Yu V ^a   Shmelev, S S ^a   Trofimov, V T ^a   Volchkov, N A ^a  

^a LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); HALL EFFECT; HIGH ELECTRON MOBILITY TRANSISTORS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE;

ELECTRON WAVEFUNCTIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031126071     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/4/015     Document Type: Article

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