Heterostructure laser-transistors controlled by resonant-tunnelling electron extraction

Semiconductor Science and Technology

Volumn 12, Issue 4, 1997, Pages 431-438

  Ryzhii, V ^a   Willander, M ^b   Ryzhii, M ^a   Khmyrova, I ^a  

^a UNIVERSITY OF AIZU   (Japan)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; HETEROJUNCTIONS; LASER APPLICATIONS; SEMICONDUCTOR QUANTUM WELLS; VOLTAGE CONTROL;

RESONANT TUNNELLING COLLECTOR; THREE TERMINAL LASER TRANSISTORS;

TRANSISTORS;

EID: 0031126070     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/4/016     Document Type: Article

References (30)

1. Shibata J, Mori Y, Sasai Y, Hase N, Serizawa H and Kajiwara T 1985 Electron. Lett. 21 98
2. Hasumi Y, Kozen A, Temmyo J and Asahi H 1987 IEEE Electron Device Lett. 8 10
3. Beneking H, Grote N and Svilans M N 1981 IEEE Trans. Electron Devices 28 404
4. Sasaki A, Matsuda K, Kimura Y and Fujita S 1982 IEEE Trans. Electron Devices 29 1382
5. Ryzhii V and Khmyrova I 1994 Solid-Slate Electron. 37 1259
6. Tolstikhin V I and Willander M 1995 Appl. Phys. Lett. 67 2684
7. Ryzhii V and Khrenov G 1992 Semicond. Sci. Technol. 7 1178
8. Shah J, Leheny R F and Nahory R E 1981 Appl. Phys. Lett. 39 618
9. Yamanishi M, Suemune I, Nonomura K and Mokoshiba N 1983 IEEE J. Quantum Electron. 19 924
10. Lubashevskii I, Ryzhii V and Suris R 1982 Sov. Tech. Phys. Lett. 8 16
11. Wada O, Yamakoshi S and Sakura T 1982 Appl. Phys. Lett. 41 981
12. Pishalko V D and Tolstikhin V I 1990 Sov. Phys.-Semicond. 24 288
13. Gorfinkel V B and Luryi S 1992 Appl. Phys. Lett. 60 3141
14. Gorfinkel V B and Luryi S 1994 Quantum Well Intersubband Transition Physics and Devices ed H C Liu, B F Levine and J Y Andersson (Dordrecht: Kluwer) p 533
15. Tolstikhin V I and Willander M 1995 J. Appl. Phys. 77 488
16. Tolstikhin V I and Willander M 1995 IEEE J. Quantum Electron. 31 814
17. Westland D J, Ryan J F, Scott M D, Davies J I and Riffat J R 1988 Solid-State Electron. 31 431-8
18. Lobentanzer H, Stolz W, Ploog K, Bänerle R J and Elsassen T 1989 Solid-State Electron. 1875-9
19. Das Sharma S, Jain J K and Jalabert R 1988 Phys. Rev. B 37 1228
20. Gong T, Fachet P M, Young J F and Kolly P J 1992 Appl. Phys. Lett. 62 522
21. Shadrin V D and Serzhenko F L 1992 Infrared Phys. 33 345
22. Rosencher E, Luc F, Boss P, Nagle J and Cordier Y 1993 Appl. Phys. Lett. 63 3312
23. Miyatake T, Horihata S, Ezaki T, Kubo H, Mori N, Taniguchi K and Hamaguchi C 1995 Solid-State Electron. 37 1187
24. Vinter B, Luc F, Bois P, Thibaudeau L and Rosencher E 1994 Solid-State Electron. 37 773
25. Agrawal G P and Dutta N K 1993 Semiconductor Lasers (New York: Van Nostrand Reinhold)
26. Kawaguchi H 1994 Bislabilities and Nonlinearities in Laser Diodes (Boston/London: Artech House)
27. Tsu R and Esaki L 1973 Appl. Phys. Lett. 22 562
28. Nordin R A, Levi A F, Nottenburg R N, O'Gorman J, Tanbun-Ek T and Logan R A 1992 J. Lightwave Technol. 10 811
29. Frateschi N C, Zhao H, Elliot J, Siala S, Govindarajan M. Nottenburg R N and Dapkus P D 1993 IEEE Photonics Technol. Lett. 5 275
30. Yamada N and Harris J S Jr 1992 Appl. Phys. Lett. 60 2463