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Volumn 124, Issue 1, 1997, Pages 91-94

O+3 cluster primary ion bombardment for secondary ion mass spectrometry

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; BORON; DOPING (ADDITIVES); MOLECULAR BEAMS; MOLECULES; OXYGEN; SECONDARY ION MASS SPECTROMETRY;

EID: 0031125525     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(97)00075-X     Document Type: Article
Times cited : (10)

References (18)
  • 8
    • 0039581455 scopus 로고
    • Proc. Third Int. workshop on the measurement and characterization of ultra shallow doping profiles in semiconductors
    • AIP, New York
    • For example, J. Ehrstein, ed., in: Proc. Third Int. Workshop on the Measurement and Characterization of Ultra Shallow Doping Profiles in Semiconductors (AIP, New York, 1995), J. Vac. Sci. Technol. B 14 (1996) 283.
    • (1995) J. Vac. Sci. Technol. B , vol.14 , pp. 283
    • Ehrstein, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.