Theoretical investigation of gain and linewidth enhancement factor for 1.55-μm tensile strained quantum-well lasers

Journal of Lightwave Technology

Volumn 15, Issue 4, 1997, Pages 711-715

  Ryu, Sang Wan ^a   Kim, Il Kyo ^b   Jeong, Weon Guk ^a,b,d,e   Choe, Byung Doo ^a   Park, Seoung Hwan ^c  

^a Seoul National University   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c Catholic University of Daegu   (South Korea)

^d Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^e UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

Author keywords

Linewidth enhancement factor; Modulation doping; Quantum well laser; Tensile strain

Indexed keywords

BAND STRUCTURE; ELECTROMAGNETIC DISPERSION; ELECTRON TRANSITIONS; MATHEMATICAL MODELS; REFRACTIVE INDEX; SEMICONDUCTOR DOPING; TENSILE STRENGTH;

LINEWIDTH ENHANCEMENT FACTOR; MODULATION DOPING; TENSILE STRAINED WELLS; VALENCE BAND DISPERSION;

QUANTUM WELL LASERS;

EID: 0031125421     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/50.566694     Document Type: Article

References (18)

1. P. J. A. Thijs, L. F. Tiemeijer, P. I. Kuindersma, J. J. M. Binsma, and T. van Dongen, "High performance 1.5 μm wavelength InGaAs-InGaAsP strained quantum well lasers and amplifiers," IEEE J. Quantum Electron., vol. 27, pp. 1426-1439, June 1991.
2. C. E. Zah, R. Bhat, F. J. Favire, Jr., S. G. Menocal, N. C. Andreadakis, and K. W. Cheung, "Low threshold 1.5 μm compressive-strained multi-and single-quantum-well lasers," IEEE J. Quantum Electron., vol. 27. pp. 1440-1450, June 1991.
3. Y. Zou, J. S. Osinski, P. Grodzinski, P. D. Dapkus, W. C. Rideout, W. F. Sharfin, J. Schlafer, and F. D. Crawford, "Experimental study of Auger recombination, gain, and temperature sensitivity of 1.5 μm compressively strained semiconductor lasers," IEEE J. Quantum Electron., vol. 29. pp. 1565-1575, June 1993.
4. G. Jones and E. P. O'Reilly, "Improved performance of long-wavelength strained bulk-like semiconductor lasers," IEEE J. Quantum Electron., vol. 29. pp. 1344-1353, May. 1993.
5. 1-y-InP tensile-strained quantum wells for 1.3 μm low-threshold lasers," IEEE Photon. Technol. Lett., vol. 7. pp. 842-844, Aug. 1995.
6. K. Uomi, "Modulation-doped multi-quantum well (MD-MQW) lasers," Japan J. Appl. Phys., vol. 29. pp. 81-87, Jan. 1990.
7. J. D. Ralston, S. Weisser, K. Eisele, R. E. Sah, E. C. Larkins, J. Rosenzweig, J. Fleissner, and K. Bender, "Low-bias-current direct modulation up to 33 GHz in InGaAs/GaAs/AlGaAs pseudomorphic MQW ridge-waveguide lasers," IEEE Photon. Technol. Lett., vol. 9. pp. 1076-1079, Sept. 1994.
8. P. A. Morton, R. A. Rogan, T. Tanbun-Ek, P. F. Sciortino, Jr., A. M. Sergent, R. K. Montgomery, and B. T. Lee, "25GHz bandwidth 1.55 μm GaInAsP p-doped strained multiquantum-well lasers," Electron. Lett., vol. 28. pp. 2156-2157, Nov. 1992.
9. J. Singh, Physics of Semiconductors and Their Heterostructures. New York: International Publishers, 1993, p. 236.
10. S. R. Chinn, P. S. Zory, and A. R. Reisinger, "A model for GRIN-SCHSQW diode lasers," IEEE J. Quantum Electron., vol. 24, pp. 2191-2214, Nov. 1988.
11. M. Asada, "Intraband relaxation time in quantum-well lasers," IEEE J. Quantum Electron., vol. 25. pp. 2019-2026, Sept. 1989.
12. M. Yamada, S. Ogita, M. Yamagishi, and K. Tabata, "Anisotropy and broadening of optical gain in a GaAs/AlGaAs multiquantum-well laser," IEEE J. Quantum Electron., vol. 21. pp. 640-645, June 1985.
13. L. F. Tiemeijer, J. J. M. Binsma, and T. van Dongen, "Effect of free carriers on the linewidth enhancement factor of InGaAs/InP (strained-layer) multiple quantum well lasers," Appl. Phys. Lett., vol. 60. pp. 2466-2468, May 1992.
14. E. P. O'Reilly and A. R. Adams, "Band-structure engineering in strained semiconductor lasers," IEEE J. Quantum Electron., vol. 30. pp. 366-379, June 1994.
15. P. J. A. Thijs, L. F. Tiemeijer, J. J. M. Binsma, and T. van Dongen, "Progress in long-wavelength strained-layer InGaAs(P) quantum-well semiconductor lasers and amplifiers," IEEE J. Quantum Electron., vol. 30. pp. 477-499, Feb. 1994.
16. T. Yamamoto, H. Nobuhara, K. Tanaka, T. Odagawa, M. Sugawara, T. Fujii, and K. Wakao, "Low-threshold tensile-strained InGaAs-InGaAsP quantum-well lasers with single-step separate-confinement heterostructures," IEEE J. Quantum Electron., vol. 29. pp. 1560-1564, May 1993.
17. C. E. Zah, R. Bhat, B. Pathak, C. Caneau, F. J. Favire, N. C. Andreadakis, D. M. Hwang, M. A. Koza, C. Y. Chen, and T. P. Lee, "Low threshold 1.5 μm tensile-strained single quantum well lasers," Electron. Lett., vol. 27. pp. 1414-1415, Aug. 1991.
18. M. Silver and E. P. O'Reilly, "Optimization of long wavelength InGaAsP strained quantum-well lasers," IEEE J. Quantum Electron., vol. 31. pp. 1193-1200, July 1995.